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THS3491IRGTT Datasheet(PDF) 4 Page - Texas Instruments

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Part # THS3491IRGTT
Description  900-MHz, High-Power Output, Current Feedback Amplifier
Download  28 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

THS3491IRGTT Datasheet(HTML) 4 Page - Texas Instruments

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4
THS3491
SBOS875 – AUGUST 2017
www.ti.com
Product Folder Links: THS3491
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
Stay below this dV/dT supply turn on and off edge rate to make sure that the edge-triggered ESD absorption device across the supply
pins remains open. Exceeding this supply edge rate may transiently show a short circuit across the supplies.
(3)
Long-term continuous current for electro-migration limits.
(4)
Thermal shutdown at approximately 165°C junction temperature and recovery at approximately 145°C
(5)
See the MSL/Reflow Rating information provided with the material, or see the TI web site at www.ti.com for the latest information.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Voltage
Supply voltage, (+VS) – (–VS)
33
V
Supply voltage turn on, turn off maximum dV/dT(2)
1
V/µs
Input/output voltage range
(–VS) – 0.5
(+VS) + 0.5
V
Differential input voltage
±0.5
Current
Continuous input current(3)
±10
mA
Continuous output current(3)
±100
Temperature
Operating, TA
TBD
TBD
°C
Junction, TJ
(4)
Normal operation
150
Continuous operation, long-term reliability
125
Storage(5), Tstg
–65
150
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±1000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±500
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
(+VS) – (–VS) Supply voltage
Dual supply
±7
±15
±16
V
Single supply
14
30
32
TA
Operating free-air temperature
–40
85
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information
THERMAL METRIC(1)
THS3491
UNIT
DDA
(SO PowerPAD™)
RGT
(VQFN With
Thermal Pad)
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
44.5
49.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
66.8
55.4
°C/W
RθJB
Junction-to-board thermal resistance
19.2
23.1
°C/W
ψJT
Junction-to-top characterization parameter
6.4
1.8
°C/W
ψJB
Junction-to-board characterization parameter
19.5
23.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
7.5
7.8
°C/W


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