TSKS5400S_13 datasheet(2/6 Pages) VISHAY

Part #	TSKS5400S

Description	Infrared Emitting Diode, 950 nm, GaAs

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Manufacturer	VISHAY [Vishay Siliconix]

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TSKS5400S

www.vishay.com

Vishay Semiconductors

Rev. 1.8, 03-Sep-13

2

Document Number: 81074

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current Limit vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 3 - Pulse Forward Current vs. Forward Voltage

Fig. 4 - Forward Voltage vs. Ambient Temperature

0

20

40

60

80

100

120

140

160

180

0

1020

3040506070

8090100

21321

T

amb - Ambient Temperature (°C)

R

thJA = 270 K/W

0

20

40

60

80

100

120

0

10

203040

50607080

90 100

T

amb - Ambient Temperature (°C)

21322

R

thJA = 270 K/W

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA, tp

≤ 20 ms

VF

1.3

1.7

V

Reverse voltage

IR = 10 μA

VR

6V

Temperature coefficient of VF

IF = 100 mA

TKVF

- 1.3

mV/K

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

50

pF

Radiant intensity

IF = 100 mA, tp

≤ 20 ms

Ie

24.5

7

mW/sr

Radiant power

IF = 50 mA, tp

≤ 20 ms

φe

10

mW

Temperature coefficient of

φe

IF = 50 mA

TK

φe

- 1.0

%/K

Angle of half sensitivity

ϕ

± 30

deg

Peak wavelength

IF = 50 mA

λp

950

nm

Spectral bandwidth

IF = 50 mA

Δλ

50

nm

Rise time

IF = 100 mA

tr

800

ns

IF = 1 A, tp/T = 0.01, tp

≤ 10 μs

tr

450

ns

94 7996

10 1

10 0

10 2

10 3

10 4

10-1

4

3

2

1

0

VF - Forward Voltage (V)

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

-45 -30 -15

15

0

3045

607590

14347

IF = 10 mA

Tamb - Ambient Temperature (°C)

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