© Semiconductor Components Industries, LLC, 2000

December, 2000 – Rev. 0

1

Publication Order Number:

NCR169D/D

NCR169D

Advance Information

General Purpose

Sensitive Gate

Silicon Controlled Rectifier

Reverse Blocking Thyristor

PNPN device designed for line-powered general purpose

applications such as relay and lamp drivers, small motor controls, gate

drivers for larger thyristors, and sensing and detection circuits.

Supplied in a cost effective plastic TO-226AA package.

Other Logic Circuits

Rating

Symbol

Value

Unit

Peak Repetitive Off–State Voltage (Note 1.)

60 Hz; Gate Open)

400

Volts

On-State RMS Current

0.8

Amp

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz,

10

Amps

Circuit Fusing Consideration (t = 10 ms)

0.415

Forward Peak Gate Power

0.1

Watt

Forward Average Gate Power

0.10

Watt

Forward Peak Gate Current

1.0

Amp

Reverse Peak Gate Voltage

5.0

Volts

Operating Junction Temperature Range

–40 to

110

°C

Storage Temperature Range

–40 to

150

°C

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

SCR

0.8 AMPERES RMS

400 VOLTS

http://onsemi.com

TO–92

(TO–226AA)

CASE 029

STYLE 10

A

G

K

PIN ASSIGNMENT

1

2

3

Gate

Anode

Cathode

K

G

A

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

MARKING

DIAGRAM

Y

= Year

WW = Work Week

NCR

169D

YWW

12 3