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TDA8939TH Datasheet(PDF) 10 Page - NXP Semiconductors |
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TDA8939TH Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 21 page 9397 750 13023 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Objective data sheet Rev. 01 — 22 April 2004 10 of 21 Philips Semiconductors TDA8939 Zero dead time Class-D 7.5 A power comparator [1] When the supply voltage is below ±12.5 V the PWM outputs will not be able to switch to the high side at the first PWM cycle. [2] OTP, OCP and/or OVP protection activated. 12. Dynamic characteristics [1] Output power measured across the loudspeaker load. Power measurement based on indirect measurement by measuring the RDS_ON. Temperature protection Tdiag diagnostic trigger temperature VDIAGN = VOL 150 - - °C Overcurrent protection Iprot diagnostic and protection trigger current VDIAGN = VOL 7.5 - - A Overvoltage protection VDD(max) diagnostic and protection trigger maximum supply voltage VDIAGN = VOL ±30 ±33 - V Table 10: Static characteristics …continued VP = ±25 V; fcarrier = 384 kHz; Tamb = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Table 11: Dynamic characteristics VP = ±25 V; Tamb = 25 °C; fcarrier = 384 kHz; see also Figure 8 for definitions. Symbol Parameter Conditions Min Typ Max Unit PWM output tr rise time output voltage - 20 - ns tf fall time output voltage - 20 - ns tdead dead time - 0 - ns tr(LH) large signal response time LOW-to-HIGH transition at output input amplitude = 3.3 V - 90 - ns tr(HL) large signal response time HIGH-to-LOW transition at output input amplitude = 3.3 V - 90 - ns tW(min) minimal pulse width - 150 - ns RDS_ON RDS_ON output transistors - 0.2 0.3 Ω η efficiency Po = Prated [1] - - 90 - |
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