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WSF128K16-72HIA Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers |
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WSF128K16-72HIA Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers |
3 / 15 page ![]() 3 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WSF128K16-XXX ABSOLUTE MAXIMUM RATINGS DC CHARACTERISTICS (VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C) Parameter Symbol Conditions Min Max Unit Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 µA Output Leakage Current I LO SCS = VIH, OE = VIH, VOUT = GND to VCC 10 µA SRAM Operating Supply Current x 16 Mode ICCx16 SCS = VIL, OE = FCS = VIH, f = 5MHz, VCC = 5.5 360 mA Standby Current ISB FCS = SCS = VIH, OE = VIH, f = 5MHz, VCC = 5.5 40 mA SRAM Output Low Voltage VOL IOL = 2.1mA, VCC = 4.5 0.4 V SRAM Output High Voltage VOH IOH = -1.0mA, VCC = 4.5 2.4 V Flash VCC Active Current for Read (1) I CC1 FCS = VIL, OE = SCS = VIH 100 mA Flash VCC Active Current for Program or I CC2 FCS = VIL, OE = SCS = VIH 130 mA Erase (2) Flash Output Low Voltage VOL IOL = 8.0mA, VCC = 4.5 0.45 V Flash Output High Voltage VOH1 IOH = -2.5 mA, VCC = 4.5 0.85 x VCC V Flash Output High Voltage VOH2 IOH = -100 µA, VCC = 4.5 VCC -0.4 V Flash Low VCC Lock Out Voltage VLKO 3.2 V Parameter Flash Data Retention 10 years Flash Endurance (write/erase cycles) 10,000 NOTES: 1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Parameter Symbol Min Max Unit Supply Voltage VCC 4.5 5.5 V Input High Voltage VIH 2.2 VCC + 0.3 V Input Low Voltage VIL -0.5 +0.8 V RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Operating Temperature T A -55 +125 °C Storage Temperature TSTG -65 +150 °C Signal Voltage Relative to GND VG -0.5 7.0 V Junction Temperature TJ 150 °C Supply Voltage VCC -0.5 7.0 V NOTES: 1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz). The frequency component typically is less than 2 mA/MHz, with OE at VIH. 2. ICC active while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V SRAM TRUTH TABLE SCS OE SWE Mode Data I/O Power H X X Standby High Z Standby L L H Read Data Out Active L H H Read High Z Active L X L Write Data In Active CAPACITANCE (TA = +25°C) Test Symbol Condition Max Unit OE Capacitance COE VIN = 0V, f = 1.0MHz 50 pF F/S WE 1-2 Capacitance CWE VIN = 0V, f = 1.0MHz 20 pF F/S CS 1-2 Capacitance CCS VIN = 0V, f = 1.0MHz 20 pF SD0-15/FD0-15 Capacitance CI/O VIN = 0V, f = 1.0MHz 20 pF A0 - A16 Capacitance CAD VIN = 0V, f = 1.0MHz 50 pF This parameter is guaranteed by design but not tested. |
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