BUZ905X4S datasheet(1/2 Pages) ETC

Part #	BUZ905X4S

Description	NEW PRODUCT UNDER DEVELOPMENT

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VDSX

Drain – Source Voltage

VGS

Gate – Source Voltage

ID

Continuous Drain Current

ID(PK)

Body Drain Diode

PD

Total Power Dissipation

@ Tcase = 25°C

Tstg

Storage Temperature Range

Tj

Maximum Operating Junction Temperature

RθJC

Thermal Resistance Junction – Case

BUZ905X4S

BUZ906X4S

–160V

–200V

±14V

–32A

500W

–55 to 150°C

150°C

0.3°C/W

MECHANICAL DATA

Dimensions in mm (inches)

1

3

4

2

R

38.0 (1 .496)

38.2 (1 .504)

30.1 (1 .1 8 5 )

3 0 .3 (1 .193 )

14.9 (0 .5 87)

15.1 (0 .5 94)

3 .3 (0 .129 )

3 .6 (0 .1 43)

7.8 (0 .3 0 7 )

8.2 (0 .3 2 2 )

3 1 .5 (1 .240 )

3 1 .7 (1 .248 )

4.0 (0 .1 5 7 )

(2 P la c e s)

R =

4.0 (0 .1 57 )

4.2 (0 .1 65 )

)

4.1 (0 .1 61

4.3 (0 .1 69

4.8 (0 .1 87 )

4.9 (0 .1 93 )

(4 places)

W =

H =

8.9 (0 .3 50)

9.6 (0 .3 78)

11 .8 (0 .463)

12 .2 (0 .480)

Hex Nut M 4

(4 places)

0.75 (0 .0 30 )

0.85 (0 .0 33 )

5.1 (0 .2 01 )

5.9 (0 .2 32 )

1.95 (0 .0 77)

2.1 4 (0 .0 84 )

P–CHANNEL

POWER MOSFET

FEATURES

• HIGH SPEED SWITCHING

• P–CHANNEL POWER MOSFET

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (160V & 200V)

• HIGH ENERGY RATING

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODE

• N–CHANNEL ALSO AVAILABLE

SOT227

Pin 1 – Drain

Pin 2 – Source

Pin 3 – Gate

Pin 4 – Drain

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated)

Prelim. 4/94

TEC

MAGNA

Magnatec. Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.

BUZ905X4S

BUZ906X4S

NEW PRODUCT UNDER DEVELOPMENT

POWER MOSFETS FOR

AUDIO APPLICATIONS

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