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IRLR3802 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRLR3802
Description  HEXFET Power MOSFET
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLR3802 Datasheet(HTML) 2 Page - International Rectifier

  IRLR3802 Datasheet HTML 1Page - International Rectifier IRLR3802 Datasheet HTML 2Page - International Rectifier IRLR3802 Datasheet HTML 3Page - International Rectifier IRLR3802 Datasheet HTML 4Page - International Rectifier IRLR3802 Datasheet HTML 5Page - International Rectifier IRLR3802 Datasheet HTML 6Page - International Rectifier IRLR3802 Datasheet HTML 7Page - International Rectifier IRLR3802 Datasheet HTML 8Page - International Rectifier IRLR3802 Datasheet HTML 9Page - International Rectifier Next Button
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IRLR/U3802
2
www.irf.com
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
–––
0.81
1.2
V
TJ = 25°C, IS = 12A, VGS = 0V
ƒ
–––
0.65
–––
TJ = 125°C, IS = 12A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
52
78
ns
TJ = 25°C, IF = 12A, VR=20V
Qrr
Reverse Recovery Charge
–––
54
81
nC
di/dt = 100A/µs
ƒ
trr
Reverse Recovery Time
–––
50
75
ns
TJ = 125°C, IF = 12A, VR=20V
Qrr
Reverse Recovery Charge
–––
50
75
nC
di/dt = 100A/µs
ƒ
S
D
G
Diode Characteristics
84
„
320
A
VSD
Diode Forward Voltage
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
12
–––
–––
V
VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
––– 0.009
–––
V/°C Reference to 25°C, ID = 1mA
ƒ
–––
6.5
8.5
VGS = 4.5V, ID = 15A
ƒ
–––
–––
30
VGS = 2.8V, ID = 12A
VGS(th)
Gate Threshold Voltage
0.6
–––
1.9
V
VDS = VGS, ID = 250µA
VGS(th)/∆TJ Gate Threshold Voltage Coefficient
–––
-3.2
––– mV/°C
–––
–––
100
µA
VDS = 9.6V, VGS = 0V
–––
–––
250
VDS = 9.6V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 12V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -12V
gfs
Forward Transconductance
31
–––
–––
S
VDS = 6.0V, ID = 12A
Qg
Total Gate Charge
–––
27
41
Qgs1
Pre-Vth Gate-Source Charge
–––
3.6
–––
VDS = 6.0V
Qgs2
Post-Vth Gate-Source Charge
–––
2.0
–––
VGS = 5.0V
Qgd
Gate-to-Drain Charge
–––
10
–––
nC
ID = 6.0A
Qgodr
Gate Charge Overdrive
–––
11
–––
See Fig.16
Qsw
Switch Charge (Qgs2 + Qgd)
–––
12
–––
Qoss
Output Charge
–––
28
–––
nC
VDS = 10V, VGS = 0V
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 6.0V, VGS = 4.5V
ƒ
tr
Rise Time
–––
14
–––
ns
ID = 12A
td(off)
Turn-Off Delay Time
–––
21
–––
Clamped Inductive Load
tf
Fall Time
–––
17
–––
Ciss
Input Capacitance
–––
2490 –––
VGS = 0V
Coss
Output Capacitance
–––
2150 –––
pF
VDS = 6.0V
Crss
Reverse Transfer Capacitance
–––
530
–––
ƒ = 1.0MHz
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
m
RDS(on)
Static Drain-to-Source On-Resistance
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
300
mJ
IAR
Avalanche Current

–––
20
A
Avalanche Characteristics


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