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IRLU3802PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRLU3802PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 10 page IRLR/U3802PbF 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.81 1.2 V TJ = 25°C, IS = 12A, VGS = 0V ––– 0.65 ––– TJ = 125°C, IS = 12A, VGS = 0V trr Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 12A, VR=20V Qrr Reverse Recovery Charge ––– 54 81 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 50 75 ns TJ = 125°C, IF = 12A, VR=20V Qrr Reverse Recovery Charge ––– 50 75 nC di/dt = 100A/µs S D G Diode Characteristics 84 320 A VSD Diode Forward Voltage Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 12 ––– ––– V VGS = 0V, ID = 250µA ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.009 ––– V/°C Reference to 25°C, ID = 1mA ––– 6.5 8.5 VGS = 4.5V, ID = 15A ––– ––– 30 VGS = 2.8V, ID = 12A VGS(th) Gate Threshold Voltage 0.6 ––– 1.9 V VDS = VGS, ID = 250µA ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -3.2 ––– mV/°C ––– ––– 100 µA VDS = 9.6V, VGS = 0V ––– ––– 250 VDS = 9.6V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V gfs Forward Transconductance 31 ––– ––– S VDS = 6.0V, ID = 12A Qg Total Gate Charge ––– 27 41 Qgs1 Pre-Vth Gate-Source Charge ––– 3.6 ––– VDS = 6.0V Qgs2 Post-Vth Gate-Source Charge ––– 2.0 ––– VGS = 5.0V Qgd Gate-to-Drain Charge ––– 10 ––– nC ID = 6.0A Qgodr Gate Charge Overdrive ––– 11 ––– See Fig.16 Qsw Switch Charge (Qgs2 + Qgd) ––– 12 ––– Qoss Output Charge ––– 28 ––– nC VDS = 10V, VGS = 0V td(on) Turn-On Delay Time ––– 11 ––– VDD = 6.0V, VGS = 4.5V tr Rise Time ––– 14 ––– ns ID = 12A td(off) Turn-Off Delay Time ––– 21 ––– Clamped Inductive Load tf Fall Time ––– 17 ––– Ciss Input Capacitance ––– 2490 ––– VGS = 0V Coss Output Capacitance ––– 2150 ––– pF VDS = 6.0V Crss Reverse Transfer Capacitance ––– 530 ––– ƒ = 1.0MHz Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current m Ω RDS(on) Static Drain-to-Source On-Resistance Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 300 mJ IAR Avalanche Current ––– 20 A Avalanche Characteristics |
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