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K9K4G08U1M Datasheet(PDF) 1 Page - Samsung semiconductor |
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K9K4G08U1M Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 40 page FLASH MEMORY 1 Preliminary K9F2G08U0M K9F2G16U0M K9K4G08U1M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. Revision No 0.0 0.1 0.2 0.3 0.4 Remark Advance Preliminary Preliminary Preliminary Preliminary History 1. Initial issue 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34) 2. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 35) The min. Vcc value 1.8V devices is changed. K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V Few current value is changed. Before Unit : us After 1. The 3rd Byte ID after 90h ID read command is don’t cared. The 5th Byte ID after 90h ID read command is deleted. 2. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) 3. Pb-free Package is added. K9F2G08Q0M-PCB0,PIB0 K9F2G08U0M-PCB0,PIB0 K9F2G16U0M-PCB0,PIB0 K9F2G16Q0M-PCB0,PIB0 K9F2GXXQ0M K9F2GXXU0M Typ. Max. Typ. Max. ISB2 20 100 20 100 ILI - ±20 - ±20 ILO - ±20 - ±20 K9F2GXXQ0M K9F2GXXU0M Typ. Max. Typ. Max. ISB210 50 10 50 ILI - ±10 - ±10 ILO - ±10 - ±10 Draft Date Sep. 19.2001 Nov. 22. 2002 Mar. 6.2003 Apr. 2. 2003 Apr. 9. 2003 |
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