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LM76003 Datasheet(PDF) 7 Page - Texas Instruments |
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LM76003 Datasheet(HTML) 7 Page - Texas Instruments |
7 / 53 page 7 LM76002, LM76003 www.ti.com SNVSAK0 – OCTOBER 2017 Product Folder Links: LM76002 LM76003 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Electrical Characteristics (continued) Limits apply over the recommended operating junction temperature (TJ) range of –40°C to +125°C, unless otherwise stated. Minimum and maximum limits are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated, the following conditions apply: VIN = 24 V, VOUT = 3.3 V, fSW = 500 kHz. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT (2) This current limit was measured as the internal comparator trip point. Due to inherent delays in the current limit comparator and drivers, the peak current limit measured in closed loop with faster slew rate will be larger, and valley current limit will be lower. (3) Measured at pins. (4) Ensured by design. CURRENT LIMITS AND HICCUP IHS_LIMIT (2) Short-circuit, high-side current limit LM76002 3.2 4.2 5.3 A LM76003 4.35 5.5 6.8 ILS_LIMIT (2) Low-side current limit LM76002 2.3 3.2 4.2 A LM76003 3.4 4.2 5.3 INEG_LIMIT Negative current limit LM76002 –2.5 A LM76003 –3.3 VHICCUP Hiccup threshold on FB pin 0.38 0.42 0.46 V IL_ZC Zero cross-current limit 0.05 A SOFT START (SS/TRK PIN) ISSC Soft-start charge current 1.8 2 2.2 µA RSSD Soft-start discharge resistance UVLO, TSD, OCP; or EN = 0 V 2 kΩ POWER GOOD (PGOOD PIN) and OVERVOLTAGE PROTECTION VPGOOD_OV Power-good overvoltage threshold % of FB voltage 106% 110% 113% VPGOOD_UV Power-good undervoltage threshold % of FB voltage 86% 90% 93% VPGOOD_HYS Power-good hysteresis % of FB voltage 2.5% VPGOOD_VALID Minimum input voltage for proper PGOOD function 50-µA pullup to PGOOD pin, VEN = 0 V, TJ = 25°C 1.3 2 V RPGOOD Power-good on-resistance VEN = 2.5 V 40 100 Ω VEN = 0 V 30 90 MOSFETS RDS_ON_HS (3) High-side MOSFET on- resistance IOUT = 1 A, VBIAS = VOUT = 3.3 V 95 150 m Ω RDS_ON_LS (3) Low-side MOSFET on- resistance IOUT = 1 A, VBIAS = VOUT = 3.3 V 45 85 m Ω THERMAL SHUTDOWN TSD (4) Thermal shutdown threshold Shutdown threshold 160 °C Recovery threshold 135 °C |
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