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TLIN1029DRBRQ1 Datasheet(PDF) 6 Page - Texas Instruments |
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TLIN1029DRBRQ1 Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 38 page  6 TLIN1029-Q1 SLLSEY5 – OCTOBER 2017 www.ti.com Product Folder Links: TLIN1029-Q1 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Electrical Characteristics (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOL Low level output voltage LIN dominant, TXD = low, VSUP = 7 V to 36 V 0.2 x VSUP V LIN dominant, TXD = low, VSUP = 4 V ≤ VOL < 7 V 1.2 VSUP_NON_OP VSUP where Impact of recessive LIN bus < 5% (ISO/DIS 17987 Param 11) TXD & RXD open LIN = 4 V to 45 V –0.3 45 V I BUS_LIM Limiting current (ISO/DIS 17987 Param 12) TXD = 0 V, VLIN = 18 V, RMEAS = 440 Ω, VSUP = 18 V , VBUSdom < 4.518 V Figure 13 40 90 200 mA I BUS_PAS_dom Receiver leakage current, dominant (ISO/DIS 17987 Param 13) LIN = 0 V, VSUP = 12 V Driver off/recessive Figure 14 –1 mA I BUS_PAS_rec1 Receiver leakage current, recessive (ISO/DIS 17987 Param 14) LIN ≥ VSUP, 4 V ≤ VSUP ≤ 36 V Driver off; Figure 15 20 µA I BUS_PAS_rec2 Receiver leakage current, recessive (ISO/DIS 17987 Param 14) LIN = VSUP, Driver off; Figure 15 –5 5 µA I BUS_NO_GND Leakage current, loss of ground (ISO/DIS 17987 Param 15) GND = VSUP, VSUP = 18 V , LIN = 0 V; Figure 16 –1 1 mA IBUS_NO_BAT Leakage current, loss of supply (ISO/DIS 17987 Param 16) LIN = 18 V, VSUP = GND; Figure 17 5 µA VBUSdom Low level input voltage (ISO/DIS 17987 Param 17) LIN dominant (including LIN dominant for wake up) Figure 11, Figure 10 0.4 × VSUP V VBUSrec High level input voltage (ISO/DIS 17987 Param 18) Lin recessive Figure 11, Figure 10 0.6 x VSUP V VBUS_CNT Receiver center threshold (ISO/DIS 17987 Param 19) VBUS_CNT = (VIL + VIH)/2 Figure 11, Figure 10 0.475 x VSUP 0.5 x VSUP 0.525 x VSUP V VHYS Hysteresis voltage (ISO/DIS 17987 Param 20) VHYS = (VIL - VIH) Figure 11, Figure 10 0.05 x VSUP 0.175 x VSUP V VSERIAL_DIODE Serial diode LIN term pull-up path (ISO/DIS 17987 Parameters 21) 0.4 0.7 1.0 V RSLAVE Pull-up resistor to VSUP (ISO/DIS 17987 Parameters 26) Normal and Standby modes 20 45 60 k Ω IRSLEEP Pull-up current source to VSUP Sleep mode, VSUP = 14 V , LIN = GND –2 –20 µA CLIN,PIN Capacitance of the LIN pin 45 pF EN INPUT PIN VIL Low level input voltage –0.3 0.8 V VIH High level input voltage 2 5.5 V VHYS Hysteresis voltage By design and characterization 50 500 IIL Low level input current EN = Low –5 0 5 µA REN Internal pull-down resistor 125 350 800 k Ω AC Characteristics D112V Duty Cycle 1 (ISO/DIS 17987 Param 27) THREC(MAX) = 0.744 x VSUP, THDOM(MAX) = 0.581 x VSUP, VSUP = 7 V to 18 V, tBIT = 50 µs (20 kbps), D1 = tBUS_rec(min)/(2 x tBIT) (See Figure 18, Figure 19) 0.396 |
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