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TLIN1029DRBTQ1 Datasheet(PDF) 5 Page - Texas Instruments |
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TLIN1029DRBTQ1 Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 38 page  5 TLIN1029-Q1 www.ti.com SLLSEY5 – OCTOBER 2017 Product Folder Links: TLIN1029-Q1 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated 6.6 Power Supply Characteristics Over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VSUP Operational supply voltage (ISO/DIS 17987 Param 10, 53) Device is operational beyond the LIN defined nominal supply voltage range See Figure 8 and Figure 9 4 36 V VSUP Nominal supply voltage (ISO/DIS 17987 Param 10, 53): Normal Mode: Ramp VSUP while LIN signal is a 10 kHz square wave with 50 % duty cycle and 18V swing. Watch RXD Normal and Standby Modes: Ramp VSUP while LIN signal is a 10 kHz square wave with 50 % duty cycle and 18 V swing. See Figure 8 and Figure 9 4 27 V Sleep Mode 4 36 V UVSUP Under voltage VSUP threshold 3 3.85 V UVHYS Delta hysteresis voltage for VSUP under voltage threshold 0.2 V ICC Supply current Normal Mode: EN = high, bus dominant; total bus load where RLIN ≥ 500 Ω and CLIN ≤ 10 nF (See Figure 14), 1 5 mA Standby Mode: EN = low, bus dominant; total bus load where RLIN ≥ 500 Ω and CLIN ≤ 10 nF (See Figure 14), 1 2.1 mA ICC Supply current Normal Mode: EN = high, Bus recessive: LIN = VSUP, 300 650 µA Standby Mode: EN = low, bus recessive: LIN = VSUP, 10 30 µA Sleep Mode: 4.0 V < VSUP ≤ 14 V, LIN = VSUP, EN – 0 V, TXD and RXD floating 8 12 µA Sleep Mode: 14 V < VSUP ≤ 36 V, LIN = VSUP, EN – 0 V, TXD and RXD floating 20 µA PD Power dissipation in normal mode (dominant) mW TSD Thermal shutdown temperature 165 °C TSD(HYS) Thermal shutdown hysteresis 25 °C 6.7 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT RXD OUTPUT PIN (OPEN DRAIN) VOL Output Low voltage Based upon external pull-up to VCC 0.6 V IOL Low level output current, open drain LIN = 0 V, RXD = 0.4 V 1.5 mA IILG Leakage current, high-level LIN = VSUP, RXD = 5 V –5 0 5 µA TXD INPUT PIN VIL Low level input voltage –0.3 0.8 V VIH High level input voltage 2 5.5 V IIL Low level input leakage current TXD = low –5 0 5 µA RTXD Internal pull-down resistor value 125 350 800 k Ω LIN PIN (REFERENCED TO VSUP) VOH High level output voltage LIN recessive, TXD = high, IO = 0 mA, VSUP = 7 V to 36 V 0.85 x VSUP V LIN dominant, TXD = high, VSUP = 4 V ≤ VOH < 7 V 3.0 V |
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