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TLV70731DQNT Datasheet(PDF) 5 Page - Texas Instruments |
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TLV70731DQNT Datasheet(HTML) 5 Page - Texas Instruments |
5 / 41 page 5 TLV707, TLV707P www.ti.com SBVS153E – FEBRUARY 2011 – REVISED FEBRUARY 2016 Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods my affect device reliability. (2) All voltages are with respect to network ground pin. 6 Specifications 6.1 Absolute Maximum Ratings over operating junction temperature range (unless otherwise noted) (1) MIN MAX UNIT Voltage(2) IN –0.3 6.0 V EN –0.3 6.0 V OUT –0.3 6.0 V Current (source) OUT Internally limited Output short-circuit duration Indefinite Temperature Operating junction, TJ –55 150 °C Storage, Tstg –55 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM) QSS 009-105 (JESD22-A114A)(1) ±2000 V Charged device model (CDM) QSS 009-147 (JESD22-C101B.01)(2) ±500 6.3 Recommended Operating Conditions over operating junction temperature range (unless otherwise noted) MIN NOM MAX UNIT VIN Input voltage 2.0 5.5 V IOUT Output current 0 200 mA TJ Operating junction temperature range –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) TLV707, TLV707P UNIT DQN (X2SON) 4 PINS RθJA Junction-to-ambient thermal resistance 208.1 °C/W RθJC(top) Junction-to-case (top) thermal resistance 108.8 °C/W RθJB Junction-to-board thermal resistance 159.4 °C/W ψJT Junction-to-top characterization parameter 3.8 °C/W ψJB Junction-to-board characterization parameter 159.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 110.2 °C/W |
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