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TMS417809 Datasheet(PDF) 9 Page - Texas Instruments |
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TMS417809 Datasheet(HTML) 9 Page - Texas Instruments |
9 / 28 page TMS416809, TMS417809 2097152-WORD BY 8-BIT HIGH-SPEED DRAMS SMKS885A – DECEMBER 1995 – REVISED MARCH 1996 9 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 electrical characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (continued) TMS417809 PARAMETER TEST CONDITIONS† ’417809 - 60 ’417809 - 70 ’417809 - 80 UNIT PARAMETER TEST CONDITIONS† MIN MAX MIN MAX MIN MAX UNIT VOH High-level output voltage IOH = – 5 mA 2.4 2.4 2.4 V VOL Low-level output voltage IOL = 4.2 mA 0.4 0.4 0.4 V II Input current (leakage) VCC = 5.5 V, VI = 0 V to 6.5 V, All others = 0 V to VCC ± 10 ± 10 ± 10 µA IO Output current (leakage) VCC = 5.5 V, VO = 0 V to VCC, CAS high ± 10 ± 10 ± 10 µA ICC1‡§ Read- or write-cycle current VCC = 5.5 V, Minimum cycle 110 100 90 mA ICC2 Standby current VIH = 2.4 V ( TTL), After 1 memory cycle, RAS and CAS high 2 2 2 mA ICC2 Standby current VIH = VCC – 0.2 V (CMOS), After 1 memory cycle, RAS and CAS high 1 1 1 mA ICC3‡§ Average refresh current (RAS-only refresh or CBR) VCC = 5.5 V, Minimum cycle, RAS cycling, CAS high (RAS only), RAS low after CAS low (CBR) 110 100 90 mA ICC4‡¶ Average EDO current VCC = 5.5 V, tHPC = MIN, RAS low, CAS cycling 90 80 70 mA † For conditions shown as MIN / MAX, use the appropriate value specified in the timing requirements. ‡ Measured with outputs open § Measured with a maximum of one address change while RAS = VIL ¶ Measured with a maximum of one address change while CAS = VIH |
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