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TPS2848 Datasheet(PDF) 4 Page - Texas Instruments |
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TPS2848 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 20 page TPS2838, TPS2839 TPS2848, TPS2849 SLVS367A – MARCH 2001 – REVISED JUNE 2001 4 www.ti.com Terminal Functions TERMINAL NAME NO. DESCRIPTION NAME TPS283x TPS284x DESCRIPTION ADJ 6 — Adjust. The adjust pin is the feedback pin for the drive regulator (TPS283X only) AGND 8 7 Analog ground BOOT 16 14 Bootstrap. A capacitor is connected between the BOOT and BOOTLO pins to develop the floating bootstrap voltage for the high-side MOSFET. The capacitor value is typically between 0.1 µF and 1 µF. BOOTLO 14 12 Boot low. This pin connects to the junction of the high-side and low-side MOSFETs. DELAY 4 4 Delay. Connecting a capacitor between this pin and ground adjusts the deadtime for high-side driver DT 7 6 Deadtime control. Connect DT to the junction of the high-side and low-side MOSFETs ENABLE 1 1 Enable. If ENABLE is low, both drivers are off. HIGHDR 15 13 High drive. This pin is the output drive for the high-side power MOSFET. IN 2 2 Input. This pin is the input signal to the MOSFET drivers. LOWDR 11 9 Low drive. This pin is the output drive for the low-side power MOSFET. NC 10 5 No internal connection PGND 9 8 Power ground. This pin is connected to the FET power ground. PWRRDY 3 3 Power ready. This open-drain pin indicates a power good for VDRV and VCC. SYNC 5 — Synchronous rectifier enable. If SYNC is low, the low-side driver is always off; if SYNC is high, the low-side driver provides gate drive to the low-side MOSFET. VCC 13 11 Input power supply. It is recommended that a capacitor (minimum 1 µF) be connected from VCC to PGND. Note that VCC must be 2 V higher than VDRV. VDRV 12 10 Drive regulator output voltage. It is recommended that a capacitor (minimum 1 µF) be connected from VDRV to PGND. Note that VCC must be 2 V higher than VDRV. detailed description low-side driver The low-side driver is designed to drive low rDS(on) N-channel MOSFETs. The current rating of the driver is 4 A, source and sink. high-side driver The high-side driver is designed to drive low rDS(on) N-channel MOSFETs. The current rating of the driver is 4 A minimum, source and sink. The high-side driver can be configured as a GND-reference driver or as a floating-bootstrap driver. The internal bootstrap diode is a Schottky, for improved drive efficiency. The maximum voltage that can be applied from BOOT to ground is 30 V. dead-time (DT) control Dead-time control prevents shoot-through current from flowing through the main power FETs during switching transitions by controlling the turnon times of the MOSFET drivers. The high-side driver is not allowed to turn on until the gate drive voltage to the low-side FET is low, and the low-side driver is not allowed to turn on until the voltage at the junction of the power FETs (BOOTLO) is low. The TTL-compatible DT terminal connects to the junction of the power FETs. ENABLE The ENABLE terminal enables the drivers. When enable is low, the output drivers are low. ENABLE is a TTL-compatible digital terminal. |
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