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IRKT230-18D20 Datasheet(PDF) 3 Page - International Rectifier

Part # IRKT230-18D20
Description  SCR / SCR and SCR / DIODE
Download  6 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRKT230-18D20 Datasheet(HTML) 3 Page - International Rectifier

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IRK.170, .230, .250 Series
3
Bulletin I27102 rev. C 05/02
www.irf.com
I
RRM
Max. peak reverse and off-state
50
mA T
J =TJ max.
I
DRM
leakage current
V
INS
RMS isolation voltage
3000
V
50Hz, circuit to base, all termin. shorted, 25°C,1s
dv/dt Critical rate of rise of off-state voltage
1000
V/
µsT
J = TJ max, exponential to 67% rated VDRM
T
J
Junction operating temperature
-40 to 130
o
C
T
stg
Storage temperature range
-40 to 150
o
C
R
thJC Maximum thermal resistance
junction to case
Mounting surface flat, smooth and greased
(per module)
T
Mounting tourque ±10%
A mounting compound is recommended and the
MAP to heatsink
4 to 6
Nm tourque should be rechecked after a period of
Busbar to MAP
4 to 6
Nm about 3 hours to allow for the spread of the
compound
wt
Approximate weight
500
g
17.8
oz
Case style
MAGN-A-pak
I
P
GM
Maximum peak gate power
10.0
W
tp
≤ 5ms,
T
J = TJ max.
P
G(AV) Maximum average gate power
2.0
W
f = 50Hz,
T
J = TJ max.
+I
GM
Maximum peak gate current
3.0
A
tp
≤ 5ms,
T
J = TJ max.
-V
GT
Max. peak negative gate voltage
5.0
V
tp
≤ 5ms,
T
J = TJ max.
V
GT
Maximum required DC gate
4.0
V
T
J = - 40
o
C
Anode supply = 12V, resistive
voltage to trigger
3.0
V
T
J = 25
o
C
load ; Ra = 1
2.0
V
T
J = TJ max.
I
GT
Maximum required DC gate
350
mA
T
J = - 40
o
C
Anode supply = 12V, resistive
current to trigger
200
mA
T
J = 25
o
C
load ; Ra = 1
100
mA
T
J = TJ max.
V
GD
Maximum gate voltage
that will not trigger
I
GD
Maximum gate current
that will not trigger
di/
dt
Max rate of rise of
turned-on current
Blocking
Triggering
Thermal and Mechanical Specifications
0.25
V
@ T
J= TJ max., rated VDRM applied
10.0
mA @ T
J= TJ max., rated VDRM applied
500
A/
µs@ T
J= TJ max., ITM = 400 A rated VDRM applied
0.17
0.125
0.125
K/W Per junction, DC operation
R
thC-S Thermal resistance, case to heatsink
0.02
0.02
0.02
K/W
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions


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