IS61LV12816

Integrated Silicon Solution, Inc. — 1-800-379-4774

3

Rev. A

11/30/00

OPERATING RANGE

Range

Ambient Temperature

Commercial

0°C to + 70°C

3.3V ± 10%

Industrial

–40°C to + 85°C

3.3V ± 10%

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

2.4

—

V

Output LOW Voltage

—

0.4

V

V

–0.3

0.8

V

Input Leakage

–11

µA

Output Leakage

–11

µA

Note:

PIN DESCRIPTIONS

A0-A16

Address Inputs

I/O0-I/O15

Data Inputs/Outputs

CE

Chip Enable Input

OE

Output Enable Input

WE

Write Enable Input

LB

Lower-byte Control (I/O0-I/O7)

UB

Upper-byte Control (I/O8-I/O15)

NC

No Connection

Vcc

Power

GND

Ground

Symbol

Parameter

Value

Unit

Power Supply Voltage Relative to GND

–0.5 to 5.0

V

Terminal Voltage with Respect to GND

–0.5 to Vcc + 0.5

V

Storage Temperature

–65 to + 150

°C

Temperature Under Bias:

Com.

–10 to + 85

°C

Ind.

–45 to + 90

°C

Power Dissipation

2.0

W

DC Output Current

±20

mA

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at these or

any other conditions above those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.