Pb Free Plating Product

MBR10100CTR/MBR10150CTR/MBR10200CTR

Pb

10 Ampere Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

®

MBR10100CTR thru MBR10200CTR

© 2006 Thinki Semiconductor Co., Ltd.

http://www.thinkisemi.com/

Page 1/2

Rev.07C

.196(5.00)

.054(1.39)

.038(0.96)

.419(10.66)

.139(3.55)

MIN

.163(4.16)

.045(1.15)

.019(0.50)

.025(0.65)MAX

.1(2.54)

.1(2.54)

.387(9.85)

TO-220AB

Unit : inch (mm)

Features

Low forward voltage drop

HMBR matured technology with high reliablity

High current capability

Case: Heatsink TO-220AB

High surge current capability

Weight: 2.0 gram approximately

Polarity: As marked on diode body

method 208

Mounting position: Any

Terminals: Solderable per MIL-STD-202

Mechanical Data

Low reverse leakage current

Epoxy: UL 94V-0 rate flame retardant

Application

Automotive Inverters/Solar Inverters

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Positive

Negative

Common Cathode

Case

Case

Case

Common Anode

Suffix "CT"

Case

Series

Tandem Polarity

Suffix "CTR"

Suffix "CTS"

Doubler

Tandem Polarity

Suffix "CTD"

V

V

V

A

A

μA

mA

dV/dt

V/μs

0.95

0.97

Storage temperature range

- 55 to +175

Note 1: tp = 2.0 μs, 1.0KHz

Maximum reverse current @ rated VR

V

Note 2: Pulse test with PW=300μs, 1% duty cycle

MBR10100CTR

10000

Typical thermal resistance

1.5

Operating junction temperature range

- 55 to +175

0.85

0.85

5

1

Peak repetitive reverse surge current (Note 1)

Maximum instantaneous forward voltage (Note 2)

1.0

0.5

0.85

0.88

0.75

Peak repetitive forward current

(Rated VR, Square Wave, 20KHz)

10

0.75

A

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

120

A

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

10

100

150

200

70

105

140

Maximum repetitive peak reverse voltage

UNIT

SYMBOL

PARAMETER

100

150

200

MBR10150CTR

MBR10200CTR