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Q67040-S4231 Datasheet(PDF) 9 Page - Infineon Technologies AG

Part # Q67040-S4231
Description  Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

Q67040-S4231 Datasheet(HTML) 9 Page - Infineon Technologies AG

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SKP06N60,
SKB06N60
SKA06N60
9Jul-02
50A/
µs 150A/µs250A/µs350A/µs 450A/µs 550A/µs
0ns
100ns
200ns
300ns
400ns
500ns
I
F = 3A
I
F = 6A
I
F = 12A
50A/
µs150A/µs 250A/µs 350A/µs 450A/µs 550A/µs
0nC
200nC
400nC
600nC
800nC
1000nC
I
F = 3A
I
F = 6A
I
F = 12A
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 20. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125
°C,
Dynamic test circuit in Figure E)
Figure 21. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125
°C,
Dynamic test circuit in Figure E)
50A/
µs 150A/µs 250A/µs 350A/µs 450A/µs 550A/µs
0A
2A
4A
6A
8A
10A
12A
I
F = 3A
I
F = 12A
I
F = 6A
50A/
µs 150A/µs 250A/µs 350A/µs 450A/µs 550A/µs
0A/
µs
100A/
µs
200A/
µs
300A/
µs
400A/
µs
500A/
µs
600A/
µs
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125
°C,
Dynamic test circuit in Figure E)
Figure 23. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125
°C,
Dynamic test circuit in Figure E)


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