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TFDU4300-TT1 Datasheet(PDF) 8 Page - Vishay Siliconix |
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TFDU4300-TT1 Datasheet(HTML) 8 Page - Vishay Siliconix |
8 / 15 page www.vishay.com 8 Document Number 82614 Rev. 1.4, 26-Jan-04 VISHAY TFDU4300 Vishay Semiconductors Recommended Circuit Diagram Operated with a clean low impedance power supply the TFDU4300 needs no additional external compo- nents. However, depending on the entire system design and board layout, additional components may be required (see figure 1). Recommended Application Circuit The capacitor C1 is buffering the supply voltage and eliminates the inductance of the power supply line. This one should be a Tantalum or other fast capacitor to guarantee the fast rise time of the IRED current. The resistor R1 is the current limiting resistor, which may be used to reduce the operating current to levels below the specified controlled values for saving bat- tery power. Vishay’s transceivers integrate a sensitive receiver and a built-in power driver. The combination of both needs a careful circuit board layout. The use of thin, long, resistive and inductive wiring should be avoided. The inputs (Txd, SD) and the output Rxd should be directly connected (DC - coupled) to the I/O circuit. The capacitor C2 combined with the resistor R2 is the low pass filter for smoothing the supply voltage. R2, C1 and C2 are optional and dependent on the quality of the supply voltages VCC1 and injected noise. An unstable power supply with dropping voltage during transmission may reduce the sensitivity (and trans- mission range) of the transceiver. The placement of these parts is critical. It is strongly recommended to position C2 as close as possible to the transceiver power supply pins. An Tantalum capacitor should be used for C1 while a ceramic capacitor is used for C2. In addition, when connecting the described circuit to the power supply, low impedance wiring should be used. When extended wiring is used the inductance of the power supply can cause dynamically a voltage drop at VCC2. Often some power supplies are not apply to follow the fast current rise time. In that case another 4.7 µF (type, see table under C1) at VCC2 will be help- ful. Under extreme EMI conditions as placing an RF- transmitter antenna on top of the transceiver, we rec- ommend to protect all inputs by a low-pass filter, as a minimum a 12 pF capacitor, especially at the Rxd port. The transceiver itself withstands EMI at GSM frequencies above 300 V/m. When interference is observed, it is picked up by the wiring to the inputs. It is verified by DPI (direct power injection) measure- ments that as long as the interfering RF - voltage is below the logic threshold levels of the inputs and equivalent levels at the outputs no interference is expected. Figure 2 and figure 3 show examples for circuit dia- grams to work with low voltage logic and using the transceiver when VCC1 = Vlogic, just connecting the responsible pins to each other. Figure 1. Recommended Application Circuit IRED Anode Vcc Ground SD Txd Rxd VCC1 GND SD Txd Rxd R1 R2 C1 C2 18096 Vlogic Mode VCC 2 IRED Cathode |
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Similar Description - TFDU4300-TT1 |
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