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JANTXV1N823ATR-1 Datasheet(PDF) 2 Page - Microsemi Corporation |
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JANTXV1N823ATR-1 Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 3 page 6.2 & 6.55 Volt Temperature Compensated Zener Reference Diodes SCOTTSD A L E DIVISION 1N821 thru 1N829A-1 DO-7 *ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified ZENER VOLTAGE (Note 1 and 4) VZ @ IZT ZENER TEST CURRENT IZT MAXIMUM ZENER IMPEDANCE (Note 2) ZZT @ IZT MAXIMUM REVERSE CURRENT IR @ 3 V VOLTAGE TEMPERATURE STABILITY ( ∆VZT MAX) -55 oC to +100oC (Note 3 and 4) EFFECTIVE TEMPERATURE COEFFICIENT αVZ JEDEC TYPE NUMBER (Note 1, 5 & 6) VOLTS mA OHMS µA mV %/ oC 1N821 1N821A 1N822† 1N823 5.9 – 6.5 5.9 – 6.5 5.9 – 6.5 5.9 – 6.5 7.5 7.5 7.5 7.5 15 10 15 15 2.0 2.0 2.0 2.0 96 96 96 48 0.01 0.01 0.01 0.005 1N823A 1N824† 1N825 1N825A 5.9 – 6.5 5.9 – 6.5 5.9 – 6.5 5.9 – 6.5 7.5 7.5 7.5 7.5 10 15 15 10 2.0 2.0 2.0 2.0 48 48 19 19 0.005 0.005 0.002 0.002 1N826 1N827 1N827A 1N828 6.2 – 6.9 5.9 – 6.5 5.9 – 6.5 6.2 – 6.9 7.5 7.5 7.5 7.5 15 15 10 15 2.0 2.0 2.0 2.0 20 9 9 10 0.002 0.001 0.001 0.001 1N829 1N829A 5.9 – 6.5 5.9 – 6.5 7.5 7.5 15 10 2.0 2.0 5 5 0.0005 0.0005 *JEDEC Registered Data. †Double Anode; electrical specifications apply under both bias polarities. NOTES: 1. Add a “-1” suffix for internal metallurgical bond. When ordering devices with tighter tolerances than specified for the VZ voltage nominal of 6.35 V, add a hyphened suffix to the part number for desired tolerance, e.g. 1N827-1-2%, 1N829-1-1%, 1N829A-1%, 1N829A-1-1%, etc. 2. Zener impedance measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25 oC. 3. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mV change at discrete temperature between the established limits. 4. Voltage measurements to be performed 15 seconds after application of dc current. 5. 1N821, 1N823, 1N825, 1N827, and 1N829 also have qualification to MIL-PRF-19500/159 by adding the JAN, JANTX, JANTXV, or JANS prefix to part numbers as well as the “-1” suffix; e.g. JANTX1N827-1, JANTXV1N829-1, etc. 6. Designate Radiation Hardened devices with “RH” prefix instead of “1N”, e.g. RH829A instead of 1N829A. GRAPHS FIGURE 1 TYPICAL CHANGE OF TEMPERATURE COEFFICIENT The curve shown in Figure 1 is typical of the diode series and greatly simplifies the estimation of the Temperature Coefficient (TC) when the diode is operated at currents other than 7.5mA. EXAMPLE: A diode in this series is operated at a current of 7.5mA and has specified Temperature Coefficient (TC) limits of +/-0.005%/ oC. To obtain the typical Temperature Coefficient limits for this same diode operated at a current of 6.0mA, the new TC limits (%/ oC) can be estimated using the graph in FIGURE 1. At a test current of 6.0mA the change in Temperature Coefficient (TC) is approximately –0.0006%. oC. The algebraic sum of +/- 0.005% oC and –0.0006%/oC gives the estimated limits of +0.0044%/ oC and -0.0056%/oC. WITH CHANGE IN OPERATING CURRENT. Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 Copyright 2003 10-27-2003 REV C |
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