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K6F1616T6C-FF55 Datasheet(PDF) 3 Page - Samsung semiconductor

Part # K6F1616T6C-FF55
Description  1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6F1616T6C-FF55 Datasheet(HTML) 3 Page - Samsung semiconductor

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K6F1616T6C Family
Revision 0.0
November 2003
3
CMOS SRAM
Preliminary
PRODUCT LIST
Industrial Temperature Products(-40~85
°C)
Part Name
Function
K6F1616T6C-FF55
K6F1616T6C-FF70
48-FBGA, 55ns, 3.0V/3.3V
48-FBGA, 70ns, 3.0V/3.3V
ABSOLUTE MAXIMUM RATINGS1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN,VOUT
-0.2 to VCC+0.3V(Max. 4.2V)
V
Voltage on Vcc supply relative to Vss
VCC
-0.2 to 4.2
V
Power Dissipation
PD
1.0
W
Storage temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
-40 to 85
°C
FUNCTIONAL DESCRIPTION
1. X means don
′t care. (Must be low or high state)
CS1
CS2
OE
WE
LB
UB
I/O1~8
I/O9~16
Mode
Power
H
X1)
X1)
X1)
X1)
X1)
High-Z
High-Z
Deselected
Standby
X1)
L
X1)
X1)
X1)
X1)
High-Z
High-Z
Deselected
Standby
X1)
X1)
X1)
X1)
H
H
High-Z
High-Z
Deselected
Standby
L
H
H
H
L
X1)
High-Z
High-Z
Output Disabled
Active
L
H
H
H
X1)
L
High-Z
High-Z
Output Disabled
Active
L
H
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
H
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
H
L
H
L
L
Dout
Dout
Word Read
Active
L
H
X1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
H
X1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
H
X1)
L
L
L
Din
Din
Word Write
Active


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