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TA4012AFE Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TA4012AFE Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page TA4012AFE 2002-01-18 1 TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features · Low current: ICC = 6.5 mA · Wide band: f = 2.0 GHz (3dB down) · Operating supply voltage: VCC = 1.5~2.2 V Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Supply voltage 1 VCC1 2.2 V Supply voltage 2 (Note1) VCC2 3 V Total power dissipation (Note2) PD 300 mW Operating temperature Topr -40~85 °C Storage temperature Tstg -55~150 °C Note1: When VCC is operated at less than 1/4 duty cycle Note2: When mounted on the glass epoxy of 2.5 cm 2 ´ 1.6 t Marking Weight: 0.003 g (typ.) OUT U 4 COLLECTOR VCC GND IN 5 4 1 2 3 |
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