NTE2320 datasheet(1/3 Pages) NTE

Part #	NTE2320

Description	Silicon NPN/PNP Transistor Quad, General Purpose Switch, Amp (Complementary Pair)

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NTE2320

Silicon NPN/PNP Transistor

Quad, General Purpose Switch, Amp

(Complementary Pair)

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO

30V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector–Base Voltage, VCBO

60V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter–Base Voltage, VEBO

5V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous Collector Current, IC

500mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (TA = +25°C, Each Die, Note 1), PD

0.65W

. . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25

°C

5.18mW/

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (TA = +25°C, Four Die Equal Power, Note 1), PD

1.25W

. . . . . . . . . . . . . . . .

Derate Above 25

°C

10mW/

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (TC = +25°C, Each Die, Note 1), PD

1.0W

. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25

°C

8.0mW/

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (TC = +25°C, Four Die Equal Power, Note 1), PD

3.0W

. . . . . . . . . . . . . . . .

Derate Above 25

°C

24mW/

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, TJ

–55

° to +150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, Tstg

–55

° to +150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Reistance, Junction–to–Ambient, RthJA

Each Die

193

°C/W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Effective, 4 Die

100

°C/W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Reistance, Junction–to–Case, RthJC

Each Die

125

°C/W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Effective, 4 Die

41.6

°C/W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Coupling Factors, Junction–to–Ambient

Q1–Q4 or Q2–Q3

60%

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Q1–Q2 or Q3–Q4

24%

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Coupling Factors, Junction–to–Case

Q1–Q4 or Q2–Q3

30%

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Q1–Q2 or Q3–Q4

20%

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Voltage and current are negative for PNP transistors.

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