Q67040S4678 datasheet(4/14 Pages) INFINEON

Part #	Q67040S4678

Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKA06N60T

^

TrenchStop series

Power Semiconductors

4

Rev. 2 Oct-04

Switching Characteristic, Inductive Load, at Tj=175

°C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

td(on)

-

8.8

-

Rise time

tr

-

8.2

-

Turn-off delay time

td(off)

-

165

-

Fall time

tf

-

84

-

ns

Turn-on energy

Eon

-

0.14

-

Turn-off energy

Eoff

-

0.18

-

Total switching energy

Ets

Tj=175

°C,

VCC=400V,IC=6A,

VGE=0/15V,

RG= 23

Ω

Lσ

1) =60nH,

Cσ

1) =40pF

Energy losses include

“tail” and diode

reverse recovery.

-

0.335

-

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

-

180

-

ns

Diode reverse recovery charge

Qrr

-

500

-

nC

Diode peak reverse recovery current

Irrm

-

7.6

-

A

Diode peak rate of fall of reverse

recovery current during tb

dirr/dt

Tj=175

°C

VR=400V, IF=6A,

diF/dt=550A/

µs

-

285

-

A/

µs

1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

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