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Q67040S4678 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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Q67040S4678 Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 14 page IKA06N60T ^ TrenchStop series Power Semiconductors 4 Rev. 2 Oct-04 Switching Characteristic, Inductive Load, at Tj=175 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 8.8 - Rise time tr - 8.2 - Turn-off delay time td(off) - 165 - Fall time tf - 84 - ns Turn-on energy Eon - 0.14 - Turn-off energy Eoff - 0.18 - Total switching energy Ets Tj=175 °C, VCC=400V,IC=6A, VGE=0/15V, RG= 23 Ω Lσ 1) =60nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. - 0.335 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 180 - ns Diode reverse recovery charge Qrr - 500 - nC Diode peak reverse recovery current Irrm - 7.6 - A Diode peak rate of fall of reverse recovery current during tb dirr/dt Tj=175 °C VR=400V, IF=6A, diF/dt=550A/ µs - 285 - A/ µs 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E. |
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