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IRKL162-12 Datasheet(PDF) 3 Page - International Rectifier |
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IRKL162-12 Datasheet(HTML) 3 Page - International Rectifier |
3 / 12 page IRK.136, .142, .162 Series 3 Bulletin I27117 rev. C 03/02 www.irf.com Thermal and Mechanical Specifications T J Max. junction operating -40 to 125 °C temperature range T stg Max. storage temperature -40 to 150 °C range RthJC Max. thermal resistance, 0.18 0.18 0.16 K/W DC operation, per junction junction to case RthCS Max. thermal resistance, 0.05 K/W Mounting surface smooth, flat and greased case to heatsink Per module T Mounting IAP to heatsink 4 to 6 Nm torque ± 10% busbar to IAP 4 to 6 wt Approximate weight 200 (7.1) g(oz) Case Style New Int-A-Pak A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. Triggering P GM Max. peak gate power 12 W tp ≤ 5ms, T J = TJ max. PG(AV) Max. average gate power 3 W f=50Hz, T J = TJ max. I GM Max. peak gate current 3 A tp ≤ 5ms, T J = TJ max. -V GT Max. peak negative 10 V gate voltage V GT Max. required DC gate 4 V TJ = - 40°C Anodesupply=6V,resistive voltage to trigger 2.5 TJ = 25°C load;Ra=1 Ω 1.7 TJ = TJmax. I GT Max. required DC gate 270 TJ = - 40°C Anodesupply=6V,resistive current to trigger 150 mA TJ = 25°C load;Ra=1 Ω 80 TJ = TJmax. V GD Max. gate voltage 0.3 V @ T J = TJ max., rated VDRMapplied that will not trigger I GD Max. gate current 10 mA that will not trigger di/ dt Max. rate of rise of 300 A/µs @T J=TJmax.,ITM=400Arated VDRMapplied turned-on current Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max. Devices Units 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o IRK.136 0.007 0.01 0.013 0.0155 0.017 0.009 0.012 0.014 0.015 0.017 IRK.142 0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023 0.0020 K/W IRK.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040 ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC) Parameter IRK.136 IRK.142 IRK.162 Units Conditions Parameter IRK.136 IRK.142 IRK.162 Units Conditions Blocking I RRM Maximum peak reverse and 50 mA T J = 125 o C IDRM off-state leakage current V INS RMS isolation voltage 3500 V 50Hz, circuit to base, all terminals shorted, t = 1s dV/dt critical rate of rise of off-state voltage 1000 V/µs TJ = TJ max., exponential to 67% rated VDRM |
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