800mA, 2MHz, PWM DC-to-DC

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3

ELECTRICAL CHARACTERISTICS (continued)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

SS Discharge Resistance

EN1 = EN2 = GND

100

200

Ω

1.6

EN_ Logic Input High

≤ 4.2V

1.4

V

EN_ Logic Input Low

0.4

V

EN_ Logic Input Current

0.1

1

µA

RESET Threshold

Percent of nominal, measured at OUT

87

90

93

%

RESET Timer Delay Time

170

200

230

ms

RESET Output Low Level

0.015

0.075

V

RESET Internal Pullup Resistance to OUT

9

14

20

k

Ω

Thermal-Shutdown Threshold

160

°C

Thermal-Shutdown Hysteresis

20

°C

ELECTRICAL CHARACTERISTICS

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

BATT Input Voltage

2.6

5.5

V

Undervoltage Lockout Threshold

2.20

2.55

V

Quiescent Supply Current

EN1 = GND, EN2 = BATT, no switching

80

µA

Shutdown Supply Current

EN1 = EN2 = GND

3

µA

Maximum Output Current

800

mA

OUT Bias Current

9µA

No load, EN1 = EN2 = BATT

3.2

Output-Voltage Accuracy

(Voltage Positioning)

100mA load

-1.2

+2.8

%

P-Channel On-Resistance

0.45

Ω

N-Channel On-Resistance

0.3

Ω

N-Channel Current-Limit Threshold

EN1 = EN2 = BATT

-0.68

-0.22

A

N-Channel Zero-Crossing Threshold

EN1 = BATT, EN2 = GND

10

65

mA

LX Output Current

(Note 2)

1.4

LX Leakage Current

EN1 = EN2 = GND

10

µA

Maximum Duty Cycle

100

%

Minimum Duty Cycle

EN1 = EN2 = BATT

17.3

%

Switching Frequency

1.8

2.2

MHz

SS Output Impedance

65

150

k

Ω

SS Discharge Resistance

EN1 = EN2 = GND

200

Ω

1.6

EN_ Logic Input High

≤ 4.2V

1.4

V