K6R4016C1C-C, K6R4016C1C-E, K6R4016C1C-I

CMOS SRAM

PRELIMPreliminaryPPPPPPPPPINARY

Rev 4.0

- 5 -

September 2001

TEST CONDITIONS*

* The above test conditions are also applied at extended and industrial temperature range.

Parameter

Value

Input Pulse Levels

0V to 3V

Input Rise and Fall Times

3ns

Input and Output timing Reference Levels

1.5V

Output Loads

See below

Output Loads(B)

5pF*

480

Ω

255

Ω

+5.0V

* Including Scope and Jig Capacitance

Output Loads(A)

Ω

Ω

30pF*

* Capacitive Load consists of all components of the

test environment.

READ CYCLE*

* The above parameters are also guaranteed at extended and industrial temperature range.

Parameter

Symbol

K6R4016C1C-10

K6R4016C1C-12

K6R4016C1C-15

Unit

Min

Max

Min

Max

Min

Max

Read Cycle Time

10

-

12

-

15

-

ns

Address Access Time

-

10

-

12

-

15

ns

Chip Select to Output

-

10

-

12

-

15

ns

Output Enable to Valid Output

-

5

-

6

-

7

ns

UB, LB Access Time

-

5

-

6

-

7

ns

Chip Enable to Low-Z Output

3

-

3

-

3

-

ns

Output Enable to Low-Z Output

0

-

0

-

0

-

ns

UB, LB Enable to Low-Z Output

0

-

0

-

0

-

ns

Chip Disable to High-Z Output

0

5

0

6

0

7

ns

Output Disable to High-Z Output

0

5

0

6

0

7

ns

UB, LB Disable to High-Z Output

0

5

0

6

0

7

ns

Output Hold from Address Change

3

-

3

-

3

-

ns