K6R4016C1C-C, K6R4016C1C-E, K6R4016C1C-I

CMOS SRAM

PRELIMPreliminaryPPPPPPPPPINARY

Rev 4.0

- 1 -

September 2001

Document Title

256Kx16 Bit High Speed Static RAM(5V Operating).

Operated at Extended and Industrial Temperature Ranges.

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

RevNo.

Rev. 0.0

Rev. 1.0

Rev. 2.0

Rev.3.0

Rev.4.0

Remark

Preliminary

Preliminary

Preliminary

Final

Final

History

Initial release with Preliminary.

1.1 Removed Low power Version.

1.2 Removed Data Retention Characteristics

2.1 Relax D.C parameters.

2.2 Relax Absolute Maximum Rating.

3.1 Delete Preliminary

3.2 Update D.C parameters and 10ns part.

3.3 Added Extended temperature range

Delete 20ns speed bin

Item

Previous

Current

12ns

190mA

200mA

15ns

185mA

195mA

20ns

180mA

190mA

Item

Previous

Current

Voltage on Any Pin Relative to Vss

-0.5 to 7.0

-0.5 to Vcc+0.5

Previous

Current

10ns

-

70mA

20mA

185mA

60mA

10mA

12ns

200mA

175mA

15ns

195mA

165mA

20ns

190mA

160mA

Draft Data

Feb. 12. 1999

Mar. 29. 1999

Aug. 19. 1999

Mar. 27. 2000

Sep. 24. 2001