MBT3946DW1T1 datasheet(4/12 Pages) ONSEMI

Part #	MBT3946DW1T1

Description	Dual General Purpose Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MBT3946DW1T1

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4

(NPN)

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

+3 V

275

10 k

1N916

Cs < 4 pF*

+3 V

275

10 k

Cs < 4 pF*

< 1 ns

−0.5 V

+10.9 V

300 ns

DUTY CYCLE = 2%

< 1 ns

−9.1 V

′

+10.9 V

DUTY CYCLE = 2%

t1

0

10 < t1 < 500 ms

* Total shunt capacitance of test jig and connectors

TYPICAL TRANSIENT CHARACTERISTICS

Figure 3. Capacitance

REVERSE BIAS VOLTAGE (VOLTS)

2.0

3.0

5.0

7.0

10

1.0

0.1

Figure 4. Charge Data

IC, COLLECTOR CURRENT (mA)

5000

1.0

VCC = 40 V

IC/IB = 10

3000

2000

1000

500

300

200

700

100

50

70

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

1.0

2.0 3.0

5.0 7.0 10

20 30 40

0.2 0.3

0.5 0.7

QT

QA

Cibo

Cobo

TJ = 25°C

TJ = 125°C

(NPN)

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