3.1 - 48

OM55N10SA - OM75N06SC

3.1

55N10SA

75N06SA

75N05SA

Parameter

60N10SC

55N10SC

75N06SC

75N05SC

Units

V

DS

Drain-Source Voltage

100

100

60

50

V

V

DGR

Drain-Gate Voltage (R

100

100

60

50

V

I

60

55

75

75

A

I

37

33

45

45

A

I

DM

180

180

225

225

A

P

Maximum Power Dissipation

130

125

125

125

W

P

Maximum Power Dissipation

55

50

50

50

W

Junction-To-Case

Linear Derating Factor

1.00

1.00

1.00

1.00

W/°C

T

J

Operating and

T

stg

Storage Temperature Range

-55 to 150

-55 to 150

-55 to 150

-55 to 150

°C

Lead Temperature (1/16" from case for 10 secs.)

300

300

300

300

°C

1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%.

2 Package Limited: SA I

I

THERMAL RESISTANCE

R

thJC

Junction-to-Case

1.0

°C/W

PACKAGE LIMITATIONS

Parameters

TO254AA

TO-258AA

Unit

I

D

Continuous Drain Current

25

35

A

Linear Derating Factor, Junction-to-Ambient

.020

.025

W/°C

R

thJA

Thermal Resistance, Junction-to-Ambient (Free Air Operation)

50

40

°C/W

.707

.697

.750

.500

.835

.815

.695

.685

.165

.155

.200 TYP.

.550

.530

.270

.240

.045

.035

.140 TYP.

.092 MAX.

.065

.055

.005

TO-258AA

MECHANICAL OUTLINE

.144 DIA.

.050

.040

.260

.249

.685

.665

.800

.790

.545

.535

.550

.510

.045

.035

.550

.530

.150 TYP.

.150 TYP.

.005

TO-254AA

Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.

Please call the factory for more information.

PACKAGE OPTIONS

MOD PAK

Z-TAB

6 PIN SIP